STMicroelectronics’ new GaN ICs platform for motion control boosts appliance energy ratings

STMicroelectronics’ new GaN ICs platform for motion control boosts appliance energy ratings High-efficiency GaN power ...
Electronics360

Guerrilla RF to sponsor Modelithics models for Its GaN power transistor line

Through the MVP program, Guerrilla RF and Modelithics are collaborating to accelerate the product development process for ...
Compound Semiconductor

GaN: Reducing the on-resistance of GaN p-n diodes

Engineers from North Carolina State University, Adroit Materials and Poland’s Institute of High-Pressure Physics have reduced ...
powerelectronicsnews

Ferroelectric Innovation Shatters Performance Barriers in GaN Power Electronics

Negative capacitance has the potential to improve GaN device performance and open new possibilities in power electronics and telecommunications. Gallium nitride transistors have rapidly emerged in ...
IEEE

Performance Enhancement of GaN Super-Lattice Castellated Field-Effect Transistors (SLCFETs) via Topside Integration of Near-Isotropic Polycrystalline Diamond

Abstract: We present the performance enhancement of GaN super-lattice castellated field-effect transistors (SLCFETs) following the integration of near-isotropic polycrystalline diamond (PCD) on top as ...
IEEE

A New GaN T-Type Three-Switch Bridge-Leg for Cryogenic HTS Magnet Power Supplies

Abstract: Cryogenic step-down dc–dc converters for supplying high-temperature superconducting magnets operate from low dc input voltages in the order of 1 V and provide high output/magnet currents.