Nexperia has announced two new additions of 1200 V 20 A silicon carbide (SiC) Schottky diodes to its power portfolio.

The DK5V100R15S from Shenzhen DongKe Semiconductor provides a compelling and drop-in alternative to Schottky rectifiers.

NEXPERIA PSC20120J and PSC20120L 1200 V 20 A silicon carbide (SiC) Schottky diodes address the demand for ultra-low power loss rectifiers which enable high-efficiency energy conversion in industrial ...

A physics-based compact model of silicon carbide (SiC) junction barrier Schottky diode for circuit simulation is developed in this paper. The semiconductor physics mechanism in SiC, such as ...

A novel low-reverse recovery charge superjunction MOSFET (SJ-MOSFET) with a p-type Schottky body diode is proposed in this letter. The device has a p-type Schottky contact on the p-pillar at the drain ...

For the first time, we demonstrated photostable and dynamic rectification in ZnO nanowire (NW) Schottky diode circuits where two diodes are face-to-face connected in the same ZnO wire. With their ...

🔹 ESP32-S3-WROOM-1-N8R8 / N16 module 🔹 UNO-style pin headers (Digital, Analog, Power) 🔹 USB Type-C programming and power 🔹 CP2102N USB to UART bridge 🔹 Onboard 5V (7805) and 3.3V (SGM2212) ...