As the industry advances into the angstrom era, gate-all-around architectures combined with atomic-scale materials ...

MILPITAS, Calif.--(BUSINESS WIRE)--GLOBALFOUNDRIES today accelerated its leading-edge roadmap with the launch of a new technology designed for the expanding mobile market. The company’s 14nm-XM ...

GlobalFoundries today accelerated its roadmap with the launch of a new technology designed for the expanding mobile market. The company’s 14nm-XM offering will give customers the performance and power ...

The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...

Logic semiconductor manufacturers plan to replace FinFET devices with Gate All Around at sub-3nm nodes. Applied Materials has introduced a complex seven chamber system with Atomic Layer Deposition as ...

Taiwan Semiconductor Manufacturing Company (TSMC) may be showing off its vision for the future of chip manufacturing technologies beyond 20 nanometers when it unveils its latest research into FinFET ...

HSINCHU, Taiwan, R.O.C., Feb. 3, 2023 – TSMC today announced the launch of its “TSMC University FinFET Program,” aimed at developing future IC design talent for the industry and empowering academic ...

“Transistor characteristics in advanced technology nodes are strongly impacted by devices design and process integration choices. Variation in the layout and pattern configuration in close proximity ...

WASHINGTON — BAE Systems is partnering with GlobalFoundries to bring advanced semiconductor manufacturing techniques to space-grade electronics — a move aimed at closing the performance gap between ...

IBM and Samsung have announced their latest advance in semiconductor design: a new way to stack transistors vertically on a chip (instead of lying flat on the surface of the semiconductor). The new ...