(Nanowerk Spotlight) After achieving the 45-nm process, today's semiconductor industry is nearing the 20-nm process and looking for techniques that would enable sub-22-nm-half-pitch line patterns [2].
This study investigates creation of 1.0µm RDL structures by a damascene process utilizing a photosensitive permanent dielectric material. The advantage of the photosensitive dielectric approach is ...
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