Researchers have developed a new theory that explains why tunnel magnetoresistance (TMR)—used in magnetic memory and other technologies—oscillates with changes in the thickness of the insulating ...

Giant magnetoresistance (GMR) is a quantum mechanical effect observed in thin film structures composed of alternating ferromagnetic and non-magnetic layers. It is characterized by a significant change ...

A technical paper titled “Robust negative longitudinal magnetoresistance and spin-orbit torque in sputtered Pt 3 Sn and Pt 3 Sn x Fe 1-x topological semimetal” was published by researchers at ...

They guess the negative one refers to a magnetoresistance effect in the normal state. The first turning point and the bifurcation point can be realized as the lower and upper critical field which in ...

In 1988, physicists Albert Fert and Peter Grünberg independently discovered a phenomenon called the giant magnetoresistance effect (GMR), which earned them both the Nobel Prize for physics in 2007.

Large tunnel magnetoresistance in magnetic tunnel junctions with magnetic electrodes of metastable body-centered cubic CoMnFe alloys. Journal of Alloys and Compounds, 2023; 960: 170750 DOI: 10. ...