Defects are responsible By using annealing to regain the pristine properties of the helium implanted film, the researchers found compelling evidence that any exchange bias present in the film is due ...

As an alternative, focused ion beam (FIB) implantation of ions, for example, nitrogen 17 and silicon 18, can greatly simplify the implantation process by eliminating the need of a nanofabricated mask.

Ion implantation is a very complicated process with many parameters and factors that affect the implant profile. For example, shadowing effects from higher aspect ratio of photoresist opening, ion ...

By combining low-energy ion implantation technique with lithography technique, the authors realized patterned doping of 2D materials. The WS 2 lateral p-n homojunction was successfully fabricated.

Their findings were presented in the study “ Plasma immersion ion implantation for tunnel oxide passivated contact in silicon solar cell,” published in Solar Cell Materials and Solar Cells.

ELEC_ENG 388: Nanotechnology VIEW ALL COURSE TIMES AND SESSIONS Prerequisites ELEC_ENG 223 or consent of instructor. Description Physics and technology of nanoscale photonic and electronic devices.