Ion implantation is a very complicated process with many parameters and factors that affect the implant profile. For example, shadowing effects from higher aspect ratio of photoresist opening, ion ...

Their findings were presented in the study “ Plasma immersion ion implantation for tunnel oxide passivated contact in silicon solar cell,” published in Solar Cell Materials and Solar Cells.

As an alternative, focused ion beam (FIB) implantation of ions, for example, nitrogen 17 and silicon 18, can greatly simplify the implantation process by eliminating the need of a nanofabricated mask.

Defects are responsible By using annealing to regain the pristine properties of the helium implanted film, the researchers found compelling evidence that any exchange bias present in the film is due ...

Ion implantation is crucial for fabricating SiC devices (Figure 1) and requires meticulous control over dopant distribution. Precise characterization of the wafer offcut or miscut angle is pivotal ...

Axcelis Technologies (ACLS), a supplier of enabling ion implantation solutions for the semiconductor industry. In March 2021, the first Purion H200 SiC implant model was introduced.

By combining low-energy ion implantation technique with lithography technique, the authors realized patterned doping of 2D materials. The WS 2 lateral p-n homojunction was successfully fabricated.

ELEC_ENG 388: Nanotechnology VIEW ALL COURSE TIMES AND SESSIONS Prerequisites ELEC_ENG 223 or consent of instructor. Description Physics and technology of nanoscale photonic and electronic devices.