The initial 1200V GaN device in a TO-247 package has an RDS (on) of 70 milliohms and easily scales to lower resistance and higher power levels. Early results show notably low leakage with a ...

News provided by NexGen Power Systems Feb 02, 2023, 11:00 AM ET NexGen Vertical GaN® Semiconductors to Deliver Best-in-Market Avalanche and Short-Circuit Ruggedness for Automotive and Other High ...